Beta-Ga2O3 is the most transparent conductive oxide. As a state-of-the-art semiconductor material, B-Ga2O3 single crystal is well known for its direct bandgap ultra-wide bandgap. Compared with other third-generation semiconductor SiC and GaN crystals, it has many outstanding advantages, such as wider bandgap (4.9eV), shorter absorption cut-off edge and lower growth cost. Its Baliga figure (εμEg3, relative to Si) is as high as 3214.1, which is about 10 times that of SiC and 4 times that of GaN crystals. This means that the devices developed by using beta-Ga2O3 will have smaller conduction loss and higher power conversion efficiency, and will have good application prospects in high-voltage and high-power devices.
B-Ga2O3 also has broad application prospects in solar-blind ultraviolet (200-280 nm) detection. Enjoying the bandgap of 4.8-4.9 eV, Gallium oxide is an ideal material for making solar blind ultraviolet detectors because its absorption band edge is located at about 250 nm, that has enabled the production of Ga2O3 to avoid alloying process such as AlGaN and ZnMgO.
Compared with traditional visible light and infrared detection, solar-blind UV detection has the inherent advantages of low background noise, high sensitivity and strong anti-interference ability. Through effectively reducing false alarm rate and signal processing difficulty, it can be used for missile approach warning, satellite communication, various environmental monitoring, maritime search and rescue, drone automatic landing guidance, chemical biological detection and many other fields.
Besides the strong points such as stable chemical property, high mechanical strength and stable performance under high temperatures, β-Ga2O3 Crystals is also not-easily corroded and enjoys an excellent optical performance,i.e.a high transparency in visible and ultraviolet area, especially in the UV and blue regions, of which is not available with conventional transparent conductive materials.Therefore, β-Ga2O3 single crystal can be a new generation of transparent conductive materials, and is applied to solar cells and flat panel display technologies. The conductivity of β-Ga2O3 single crystals changes with the surrounding environment and can be applied to gas detection technology.
General Properties of Ga2O3 Single Crystal | |
Crystal Structure | Monoclinic |
Lattice Constant | a=5.80A, b=3.04 A,c=12.23A |
Melting Point | 1740℃ |
Relative Permittivity | 10 |
Thermal Conductivity | 11W/m/℃ at 25℃[100] |
Breakdown Field Strength | 8 MV/cm |
Mobility | 300 cm2/Vs |
Band Gap | 4.8~4.9 eV |
XRD Twin Crystal Swing Half Width | 27" |
Dislocation Density | 3×104/cm |
Surface Roughness | 0.2nm-Customer-designed |
Resistivity Regulation | 5×10-3 ~ 109Ω·cm |
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Orientation | Size | Specification | Draft |
(010) | 10mm×10mm×1mm | FWHM<150” |
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10mm×10mm×0.5mm | |||
5mm×5mm×1mm | |||
5mm×5mm×0.5mm | |||
(100) | 10mm×10mm×1mm | FWHM<100” |
Lens Proofing Processing
Sapphire Window
Optical Window
Optical Prototypes
Gallium Oxide (β-Ga2O3) Crystal Window
Fused Silica Window